Product Summary

The APT30M19JVFR is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. The APT30M19JVFR also achieves faster switching speeds through optimized gate layout.

Parametrics

APT30M19JVFR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 300V; (2)Continuous Drain Current at TC = 25℃, ID: 130A; (3)Pulsed Drain Current, IDM: 520A; (4)Gate-Source Voltage Continuous, VGS: ±30V; (5)Gate-Source Voltage Transient, VGSM: ±40V; (6)Total Power Dissipation at TC = 25℃, PD: 700W; (7)Linear Derating Factor: 5.6W/℃; (8)Operating and Storage Junction Temperature Range, Tj, Tstg: -55 to 150℃; (9)Lead Temperature: 0.063 from Case for 10 Sec, TL: 300℃; (10)Avalanche Current (Repetitive and Non-Repetitive), IAR: 130A; (11)Repetitive Avalanche Energy, EAR: 50mJ; (12)Single Pulse Avalanche Energy, EAS: 3600mJ.

Features

APT30M19JVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular SOT-227 Package; (5)Faster Switching.

Diagrams

APT30M19JVFR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
APT30M19JVFR
APT30M19JVFR


MOSFET N-CH 300V 130A SOT-227

Data Sheet

0-10: $34.53
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
APT30D100B
APT30D100B

Other


Data Sheet

Negotiable 
APT30D100BCA
APT30D100BCA

Other


Data Sheet

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APT30D100BCAG
APT30D100BCAG


DIODE ULT FAST 2X18A 1000V TO247

Data Sheet

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APT30D100BCT
APT30D100BCT

Other


Data Sheet

Negotiable 
APT30D100BCTG
APT30D100BCTG


DIODE ULT FAST 2X30A 1000V TO247

Data Sheet

0-1: $4.02
1-10: $3.62
10-100: $2.97
100-250: $2.73
250-500: $2.49
500-1000: $2.17
1000-2500: $2.09
2500-5000: $2.01
5000-10000: $1.97
APT30D100BG
APT30D100BG


DIODE ULT FAST 30A 1000V TO-247

Data Sheet

0-1: $2.66
1-10: $2.38
10-100: $1.95
100-250: $1.76
250-500: $1.58
500-1000: $1.33
1000-2500: $1.27
2500-5000: $1.21
5000-10000: $1.18