Product Summary

The BLF246B is a VHF power MOS transistor. Silicon N-channel enhancement mode vertical D-MOS transistor BLF246B encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads of the BLF246B are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of the handbook for further information.

Parametrics

BLF246 absolute maximum ratings: (1)VDS drain-source voltage:65 V; (2)VGS gate-source voltage:±20 V; (3)ID DC drain current: 13 A; (4)Ptot total power dissipation Tamb ≤ 25 ℃: 130 W; (5)Tstg storage temperature: -65 +150 ℃; (6)Tj junction temperature: 200 ℃.

Features

BLF246 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

BLF246 symbol

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