Product Summary

The IXFN130N30 is a Single Die MOSFET. The applications of the IXFN130N30 include: DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls.

Parametrics

IXFN130N30 absolute maximum ratings: (1)VDSS: 300 V; (2)VDGR: 300 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 130 A; (6)IL(RMS): 100 A; (7)IDM: 520 A; (8)IAR: 100 A; (9)EAR: 85 mJ; (10)EAS: 4 J; (11)dv/dt: 5 V/ns; (12)PD: 700 W; (13)TJ: -55 to +150 ℃; (14)TJM: 150 ℃; (15)Tstg: -55 to +150 ℃; (16)VISOL: 2500 V.

Features

IXFN130N30 features: (1)International standard packages; (2)miniBLOC, with Aluminium nitride isolation; (3)Low RDS (on) HDMOS process; (4)Rugged polysilicon gate cell structure; (5)Unclamped Inductive Switching (UIS) rated; (6)Low package inductance; (7)Fast intrinsic Rectifier.

Diagrams

IXFN130N30 diagram

Image Part No Mfg Description Data Sheet Download Pricing
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IXFN130N30
IXFN130N30

Ixys

MOSFET 300V 130A

Data Sheet

Negotiable 
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