(China (Mainland))
Product Summary
The MG200J2YS50 is a silicon N channel IGBT. The applications of it include High Power Switching and Motor Control.
Parametrics
MG200J2YS50 absolute maximum ratings: (1)collector-emitter voltage:600V; (2)gate-emitter voltage:±20V; (3)collector current:IC:200A, ICP:400A; (4)forward current:IF:200A, IFM:400A; (5)collector power dissipation:900W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.
Features
MG200J2YS50 features: (1)The electrodes are isolated from case; (2)High input impedance ; (3)Includes a complete half bridge in one package ; (4)Enhancement-mode ; (5)High Speed: tf = 0.30μs (Max) (IC= 200A), trr = 0.15μs (Max)(IF = 200A) ; (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 200A).
Diagrams
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 MG2000 |
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MG2001 |
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MG2002 |
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MG2004 |
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MG200J6ES60 |
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Negotiable |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
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