Product Summary
The MG75Q1BS11 is a TOSHIBA GTR module which is a silicon N channel IGBT.
Parametrics
MG75Q1BS11 absolute maximum ratings: (1)collector-emitter voltage: 1200 V; (2)gate-emitter voltage: ±20 V; (3)collector current: 75 A; (4)forward current: 75 A; (5)collector power dissipation: 300W; (6)junction temperature: 150 ℃; (7)storage temperature range: -40 to 125 ℃; (8)isolation voltage: 2500 V; (9)screw torque: 2/3 Nm.
Features
MG75Q1BS11 features: (1)high input impedance; (2)high speed: tf=1.0μs Max; (3)low saturation voltage: VCE(sat)=2.7V Max; (4)enhancement-mode; (5)the electrodes are isolated from case.
Diagrams
MG750-1.00K-1% |
Caddock Electronics Inc |
RES 1K 1% HIGH VOLT AXIAl 7.5 |
Data Sheet |
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MG750-10.0M-1% |
Caddock |
Thick Film Resistors - Through Hole 10M ohm 1% |
Data Sheet |
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MG750-20M-1% |
Caddock |
Thick Film Resistors - Through Hole |
Data Sheet |
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MG750-402K-1% |
Caddock Electronics Inc |
RES 402K 1% HIGH VOLT AXIAL 7.5 |
Data Sheet |
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MG750-5.00K-1% |
Caddock |
Thick Film Resistors - Through Hole 5K ohm 1% |
Data Sheet |
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MG75P |
Other |
Data Sheet |
Negotiable |
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