(China (Mainland))
Product Summary
The MRF21120 is a N-Channel Enhancement -Mode Lateral MOSFET designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. The MRF21120 is suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Parametrics
MRF21120 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage ,VGS: -0.5, +15 Vdc; (3)Total Device Dissipation at TC = 25℃, PD: 389W; Derate above 25℃, PD: 2.22 W/℃; (4)Storage Temperature Range, Tstg: - 65 to +150℃; (5)Case Operating Temperature, TC: 150℃; (6)Operating Junction Temperature, TJ: 200℃.
Features
MRF21120 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF21120 |
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MRF20030 |
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MRF20030R |
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MRF20060 |
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MRF20060_1248487 |
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MRF20060R |
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MRF20060RS |
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